Raytheon Company (NYSE: RTN) has embarked on its fifteenth year of pioneering the development and system integration of gallium nitride (GaN) technology. In 1999, Raytheon commenced research in GaN at the Raytheon Foundry in Andover, Mass. Today, Raytheon remains at the forefront of GaN innovation, demonstrating the maturity of the technology which significantly extends the warfighter's reach into the battle space by increasing radar ranges, sensitivity and search capabilities
"GaN technologies are transforming the way we address the evolving needs of our customers," said Paul Ferraro, vice president of Advanced Technology for Raytheon's Integrated Defense Systems business. "Through partnerships with the Office of the Secretary of Defense (OSD) and DARPA, we are harnessing the revolutionary power, efficiency and performance improvements that GaN provides in programs today including AMDR and Next Generation Jammer. We are optimistic about its impact on future initiatives like 3DELRR and others."
Source: Raytheon Corporation (NYSE: RTN)
Date: Feb 18, 2014