NGC Develops New Gallium Arsenide E-Band High-Power Monolithic Microwa
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Wednesday, April 16, 2014


NGC Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits

Northrop Grumman Corporation (NYSE:NOC) has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum.

A photo accompanying this release is available at http://media.globenewswire.com/noc/mediagallery.html?pkgid=19310


The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 – 86GHz and 71 – 76GHz respectively.

In 2004, Northrop Grumman became the first company to provide commercial availability of E-Band semiconductors. These new products are an example of Northrop's ongoing effort to push the boundaries of robust GaAs technology, said Frank Kropschot, general manager, Microelectronics Products and Services, Northrop Grumman Aerospace Systems.

"Customers typically combine several MMIC products in this frequency band to achieve higher output power. The APH667 and APH668 will allow them to dramatically reduce the number of components required to reach those goals, simplifying the product's architecture and enhancing the performance," he said.

Product descriptions:

APH667:

  • The APH667 is a 0.1 mm GaAs HEMT MMIC power amplifier MMIC that operates between 81 and 86 GHz.
  • This power amplifier provides 17 dB of linear gain, +25.5 dBm (0.35 W) of saturated output power (typical).

APH668:

  • The APH668 is a 0.1 mm GaAs HEMT MMIC power amplifier chip that is operates between 71 and 76 GHz.
  • This power amplifier provides 19 dB of linear gain, +28 dBm (0.63 W) of saturated output power (typical).

Pre-production quantities of the APH667 and APH668 will be available in the third quarter of 2013 with production quantities available in fourth quarter of 2013.

Source : Northrop Grumman Corporation (NYSE:NOC)

Published on ASDNews: Jun 14, 2013

 

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