Northrop Grumman Corporation (NYSE:NOC) has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.
Initial engineering evaluation sampling is underway with quantities of three GaN MMIC products. They were developed for defense and commercial ground satellite communication terminal markets and the commercial wireless infrastructure market, said Frank Kropschot, general manager of the Microelectronics Products and Services (MPS) business unit of Northrop Grumman Aerospace Systems.
"We have been producing gallium nitride-based devices since 2002 at Northrop Grumman's dedicated wafer fabrication facility in Redondo Beach, which the Department of Defense has designated as a Trusted Foundry," Kropschot said. "We have achieved outstanding performance and reliability from our high-frequency gallium nitride process and are extremely confident that these GaN MMICs will improve performance, efficiency and bandwidth for military and commercial users."
The initial set of three MMICs has these performance characteristics:
"These new products are the first of several we plan to introduce into the marketplace during the next few months as we roll out a new family of products using Northrop Grumman's 0.2µm GaN HEMT process developed partially under the Defense Advanced Research Projects Agency's (DARPA's) Wide Band Gap Semiconductors for Radio Frequency program (WBGS-RF)," Kropschot said. He added the DARPA program was the first of several key GaN technology development contracts awarded to Northrop Grumman beginning in 2002.
He noted that GaN devices are key components the new low-cost terminals recently introduced by an industry team consisting of Northrop Grumman, Lockheed Martin Space Systems and TeleCommunication Systems.
Source: Northrop Grumman Corporation (NYSE:NOC)
Date: Nov 1, 2012