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SEMICOA Announces New High Reliability Power MOSFETs for Military and Aerospace Markets

  • MOSFETs Target Wide Range of JAN, JANTX, JANTXV and JANS Applications

SEMICOA Corporation, a leading supplier of discrete semiconductors for high-reliability military, aerospace and commercial markets today unveiled its first wave of high performance power MOSFET products targeting military and aerospace applications.  The launch of SEMICOA's first MOSFET product families marks a new period of growth for the company long renowned for providing leading edge, high reliability, radiation hardened bipolar transistors to the military and aerospace communities.

SEMICOA's new MOSFET products cover a broad range of JAN, JANTX, JANTXV and JANS level applications.  Leveraging its proprietary architecture from both N-Channel and P-Channel topologies, SEMICOA's new MOSFETs address performance and supply constraints commonly experienced by defense and aerospace customers.  In addition, where radiation is a requirement, SEMICOA's new radiation hardened MOSFETs provide a proven, alternative source for customers.


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"The launch of our new MOSFET product families leverages our technology leadership in delivering high-performance, high reliability products to the military and aerospace customers we have served for more than 40 years," stated Ramesh Ramchandani, President. "The new products reinforce our capability to provide radiation hardened solutions to the military and aerospace arena, while growing a winning product roadmap beyond space level applications to include JANTX, JANTXV as well as targeted commercial markets. It is a natural expansion of technology portfolio, which will help to drive the growth of the company."

Initial radiation hardened MOSFETs for both space level and military applications offer voltages ranges from 30 to 500 volts, meeting and exceeding 100K rad levels. SEMICOA also offers non radiation hardened versions of MOSFETs within the same voltage ranges.  

Source : SEMICOA Corporation

Published on ASDNews: Jan 11, 2012

 

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